SiC Power Semiconductor
SiC Power Semiconductor In recent decades, power semiconductor devices based on the newly developed third-generation wide bandgap power semiconductor material silicon carbide (SiC) have attracted much attention due to their excellent performance. Compared with the first generation of semiconductor materials silicon (Si), germanium (Ge) and the second generation of semiconductor materials gallium arsenide (GaAs), gallium phosphide (GaP), GaAsAl, GaAsP and other compounds, SiC has wider band gap, stronger [...]

