Ultrasonic Spray Pyrolysis of Ba-Sn-Zr-Sx Perovskite Photodetector Films
Ba-Sn-Zr-Sx chalcogenide perovskite thin films by ultrasonic spray pyrolysis for UV-Vis-NIR photodetector applications
As a new type of ionic semiconductor, sulfur based perovskite has become a high-quality alternative material to traditional halide perovskites due to its excellent optoelectronic properties and ultra-high stability, and has broad application prospects in the fields of optoelectronic detection and photovoltaics.
The typical chemical formula of this material is ABX ∝. Zirconium based and tin based chalcogenides have attracted much attention due to their suitable bandgap width, high carrier mobility, and strong light absorption characteristics. However, the current mainstream preparation techniques rely mainly on complex processes such as high-temperature solid-state synthesis and pulsed laser deposition, which have problems such as high preparation temperature, complicated process, and difficulty in device integration. There are also no relevant reports on the direct preparation of barium zirconium tin composite chalcogenide perovskite films by solution method.
In this paper, non stoichiometric Ba-Sn-Zr-Sx perovskite thin films were successfully prepared by the solution method of ultrasonic spray pyrolysis combined with rapid heat treatment, which is the first report of direct deposition of thin films in this system. In this study, barium acetate, hydrated zirconium oxynitrate, stannic chloride dihydrate, and thioacetamide were used as precursors to prepare homogeneous precursor solution. The film was deposited by ultrasonic spray process and then crystallized through rapid heat treatment. The process was simple and controllable, avoiding the drawbacks of traditional high-temperature preparation.
The results of microstructure and composition testing indicate that the prepared thin film has a polycrystalline structure, with distorted orthorhombic phases BaZrS3 and BaSnS3, and contains a small amount of secondary phase Ba2O3 Zr ₂ S ₇. The surface morphology of the film is uniform, the substrate coverage is good, and the four elements of barium, zirconium, tin, and sulfur are evenly distributed in the depth of the film, presenting a non stoichiometric elemental composition characteristic as a whole. Optical testing shows that the film has a direct bandgap of 1.46 eV, corresponding to an absorption cutoff edge of 850 nm, and exhibits significant sub bandgap absorption characteristics. The light absorption range can be extended to 1500 nm, which is due to the non stoichiometric composition and multiphase structure induced bandgap defect states.
The photoelectric detection performance test confirmed that the film can achieve UV visible near-infrared wide spectrum detection, with a light responsivity of 20-27 × 10 ⁻⁶ mA/W in the spectral range of 395-1064 nm, a detection goodness of speech of 2-6 × 10 ¹¹ Jones, and excellent photostability. The composite doping of zirconium and tin optimizes the band structure, combined with multiphase synergistic effects, effectively enhancing the wide spectral photoelectric response capability of the film.
This study innovatively achieved the controllable preparation of Ba Sn Zr Sx perovskite thin films by low-temperature solution method, systematically elucidated the structure, optical and optoelectronic detection properties of the films, and filled the gap in solution preparation and optoelectronic application research of this composite system. The concise and efficient preparation process, as well as the stable and excellent broad-spectrum optoelectronic properties, provide a new idea and technical support for the industrial application of sulfur based perovskite thin films in the field of high-performance and high stability optoelectronic devices.
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